SST6427T116
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- Mfr.Part #
- SST6427T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V SMD3
- Stock
- 45,893
- In Stock ：
- 45,893
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- VCEsat-Max :
- 1.5 V
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature (Max) :
- 150°C
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 12V
- Radiation Hardening :
- No
- Transition Frequency :
- 250MHz
- JESD-30 Code :
- R-PDSO-G3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity :
- NPN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Collector-Base Capacitance-Max :
- 7pF
- Mount :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 50nA
- Datasheets
- SST6427T116
NPN - Darlington 50nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SST6427T116 Overview
In this device, the DC current gain is 10000 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500μA, 500mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 50nA volts at Single BJT transistors maximum.
SST6427T116 Features
the DC current gain for this device is 10000 @ 10mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
a transition frequency of 250MHz
SST6427T116 Applications
There are a lot of ROHM Semiconductor
SST6427T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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