SSN1N45BTA
- Mfr.Part #
- SSN1N45BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 500MA TO92-3
- Stock
- 23,397
- In Stock :
- 23,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 900mW Ta
- Turn-Off Delay Time :
- 23 ns
- Pbfree Code :
- yes
- Weight :
- 240mg
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 30 Weeks
- Feedback Cap-Max (Crss) :
- 8.5 pF
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 500mA
- Rise Time :
- 21ns
- Voltage - Rated DC :
- 450V
- Drain to Source Breakdown Voltage :
- 450V
- Rds On (Max) @ Id, Vgs :
- 4.25 Ω @ 250mA, 10V
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Turn On Delay Time :
- 7.5 ns
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 50V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Vgs (Max) :
- ±50V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tc
- Power Dissipation :
- 900mW
- Continuous Drain Current (ID) :
- 500mA
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 21 ns
- Datasheets
- SSN1N45BTA

N-Channel Tape & Box (TB) 4.25 Ω @ 250mA, 10V ±50V 240pF @ 25V 8.5nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SSN1N45BTA Description
With a voltage of 450V, ON Semiconductor's SSN1N45BTA is an N-Channel enhancement mode power field-effect transistor. Fairchild's unique planar DMOS technology is used to make these N-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses. The SSN1N45BTA is ideal for electronic ballasts with a half-bridge arrangement.
SSN1N45BTA Features
-
0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V
-
Low gate charge ( typical 6.5 nC)
-
Low Crss ( typical 6.5 pF)
-
100% avalanche tested
-
Improved dv/dt capability
-
Gate-Source Voltage ± 50V guaranteed
SSN1N45BTA Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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