SSN1N45BTA

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Mfr.Part #
SSN1N45BTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
MOSFET N-CH 450V 500MA TO92-3
Stock
23,397
In Stock :
23,397

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
900mW Ta
Turn-Off Delay Time :
23 ns
Pbfree Code :
yes
Weight :
240mg
Vgs(th) (Max) @ Id :
3.7V @ 250μA
ECCN Code :
EAR99
Factory Lead Time :
30 Weeks
Feedback Cap-Max (Crss) :
8.5 pF
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Current Rating :
500mA
Rise Time :
21ns
Voltage - Rated DC :
450V
Drain to Source Breakdown Voltage :
450V
Rds On (Max) @ Id, Vgs :
4.25 Ω @ 250mA, 10V
Terminal Finish :
Tin (Sn)
Number of Terminations :
3
FET Type :
N-Channel
REACH SVHC :
No SVHC
Terminal Position :
BOTTOM
Turn On Delay Time :
7.5 ns
Drain Current-Max (Abs) (ID) :
0.5A
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
50V
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Vgs (Max) :
±50V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tape and Box (TB)
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
JESD-609 Code :
e3
Element Configuration :
Single
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
500mA Tc
Power Dissipation :
900mW
Continuous Drain Current (ID) :
500mA
Transistor Application :
SWITCHING
Radiation Hardening :
No
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type :
Through Hole
Fall Time (Typ) :
21 ns
Datasheets
SSN1N45BTA
Introducing Transistors - FETs, MOSFETs - Single onsemi SSN1N45BTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, SSN1N45BTA pinout, SSN1N45BTA datasheet PDF, SSN1N45BTA amp .Beyond Transistors - FETs, MOSFETs - Single onsemi SSN1N45BTA ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SSN1N45BTA


N-Channel Tape & Box (TB) 4.25 Ω @ 250mA, 10V ±50V 240pF @ 25V 8.5nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SSN1N45BTA Description


With a voltage of 450V, ON Semiconductor's SSN1N45BTA is an N-Channel enhancement mode power field-effect transistor. Fairchild's unique planar DMOS technology is used to make these N-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses. The SSN1N45BTA is ideal for electronic ballasts with a half-bridge arrangement.



SSN1N45BTA Features


  • 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V

  • Low gate charge ( typical 6.5 nC)

  • Low Crss ( typical 6.5 pF)

  • 100% avalanche tested

  • Improved dv/dt capability

  • Gate-Source Voltage ± 50V guaranteed



SSN1N45BTA Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial



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