SSN1N45BBU
- Mfr.Part #
- SSN1N45BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 500MA TO92-3
- Stock
- 1,398
- In Stock :
- 1,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 900mW Ta
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tc
- JESD-30 Code :
- O-PBCY-T3
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Rds On (Max) @ Id, Vgs :
- 4.25 Ω @ 250mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Terminal Position :
- BOTTOM
- Drain to Source Voltage (Vdss) :
- 450V
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 450V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Feedback Cap-Max (Crss) :
- 8.5 pF
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±50V
- Terminal Finish :
- MATTE TIN
- Transistor Application :
- SWITCHING
- Datasheets
- SSN1N45BBU
,TO-226_straightlead.jpg)
N-Channel Bulk 4.25 Ω @ 250mA, 10V ±50V 240pF @ 25V 8.5nC @ 10V 450V TO-226-3, TO-92-3 (TO-226AA)
SSN1N45BBU Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 240pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 0.5A.A normal operation of the DS requires keeping the breakdown voltage above 450V.This transistor requires a drain-source voltage (Vdss) of 450V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SSN1N45BBU Features
a 450V drain to source voltage (Vdss)
SSN1N45BBU Applications
There are a lot of Rochester Electronics, LLC
SSN1N45BBU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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