SQP90P06-07L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Unknown

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

320 mJ

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

14280pF @ 25V

Packaging :

Tube

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0067Ohm

Number of Terminations :

3

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

480A

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 30A, 10V

FET Type :

P-Channel

Series :

Automotive, AEC-Q101, TrenchFET®

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

300W Tc

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

120A

Package / Case :

TO-220-3