SQP90142E_GE3
- Mfr.Part #
- SQP90142E_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 78.5A TO220AB
- Stock
- 14,561
- In Stock :
- 14,561
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-220AB
- Turn-Off Delay Time :
- 39 ns
- Height :
- 19.31mm
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 17 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 78.5A Tc
- Rds On (Max) @ Id, Vgs :
- 15.3mOhm @ 20A, 10V
- Max Junction Temperature (Tj) :
- 175°C
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 12.7mOhm
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 78.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Packaging :
- Tube
- Power Dissipation-Max :
- 250W Tc
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 200V
- Number of Channels :
- 1
- Factory Lead Time :
- 12 Weeks
- Max Operating Temperature :
- 175°C
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 250W
- Datasheets
- SQP90142E_GE3

N-Channel Tube 15.3mOhm @ 20A, 10V ±20V 4200pF @ 25V 85nC @ 10V 200V TO-220-3
SQP90142E_GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4200pF @ 25V.This device conducts a continuous drain current (ID) of 78.5A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 39 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 12.7mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SQP90142E_GE3 Features
a continuous drain current (ID) of 78.5A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 12.7mOhm
a 200V drain to source voltage (Vdss)
SQP90142E_GE3 Applications
There are a lot of Vishay Siliconix
SQP90142E_GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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