SQP90142E_GE3

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Mfr.Part #
SQP90142E_GE3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 78.5A TO220AB
Stock
14,561
In Stock :
14,561

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-220AB
Turn-Off Delay Time :
39 ns
Height :
19.31mm
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Turn On Delay Time :
17 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
78.5A Tc
Rds On (Max) @ Id, Vgs :
15.3mOhm @ 20A, 10V
Max Junction Temperature (Tj) :
175°C
Drain to Source Voltage (Vdss) :
200V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
12.7mOhm
Series :
Automotive, AEC-Q101, TrenchFET®
Package / Case :
TO-220-3
FET Type :
N-Channel
Continuous Drain Current (ID) :
78.5A
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Packaging :
Tube
Power Dissipation-Max :
250W Tc
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
200V
Number of Channels :
1
Factory Lead Time :
12 Weeks
Max Operating Temperature :
175°C
Min Operating Temperature :
-55°C
Power Dissipation :
250W
Datasheets
SQP90142E_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQP90142E_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1, SQP90142E_GE3 pinout, SQP90142E_GE3 datasheet PDF, SQP90142E_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQP90142E_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQP90142E_GE3


N-Channel Tube 15.3mOhm @ 20A, 10V ±20V 4200pF @ 25V 85nC @ 10V 200V TO-220-3

SQP90142E_GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4200pF @ 25V.This device conducts a continuous drain current (ID) of 78.5A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 39 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 12.7mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SQP90142E_GE3 Features


a continuous drain current (ID) of 78.5A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 12.7mOhm
a 200V drain to source voltage (Vdss)


SQP90142E_GE3 Applications


There are a lot of Vishay Siliconix
SQP90142E_GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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