SQM100P10-19L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

19m Ω @ 30A, 10V

Terminal Position :

Single

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain-source On Resistance-Max :

0.019Ohm

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

200A

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

93A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Reach Compliance Code :

Unknown

Number of Elements :

1

Series :

Automotive, AEC-Q101, TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

245 mJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

14100pF @ 25V

Power Dissipation-Max :

375W Tc

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2