SQM100N04-2M7_GE3

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Mfr.Part #
SQM100N04-2M7_GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO263
Stock
3,779
In Stock :
3,779

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Turn-Off Delay Time :
48 ns
Continuous Drain Current (ID) :
100A
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Published :
2016
Drain-source On Resistance-Max :
0.0027Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Rise Time :
11ns
Rds On (Max) @ Id, Vgs :
2.7m Ω @ 30A, 10V
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
Gull wing
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Fall Time (Typ) :
9 ns
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
245 mJ
Factory Lead Time :
12 Weeks
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
400A
Weight :
1.946308g
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds :
7910pF @ 25V
Turn On Delay Time :
14 ns
Drain to Source Voltage (Vdss) :
40V
Series :
Automotive, AEC-Q101, TrenchFET®
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
40V
Vgs (Max) :
±20V
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
ECCN Code :
EAR99
Power Dissipation-Max :
157W Tc
Packaging :
Tape and Reel (TR)
Number of Channels :
1
Datasheets
SQM100N04-2M7_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQM100N04-2M7_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Channels:1, SQM100N04-2M7_GE3 pinout, SQM100N04-2M7_GE3 datasheet PDF, SQM100N04-2M7_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQM100N04-2M7_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQM100N04-2M7_GE3


N-Channel Tape & Reel (TR) 2.7m Ω @ 30A, 10V ±20V 7910pF @ 25V 145nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SQM100N04-2M7_GE3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7910pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 48 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

SQM100N04-2M7_GE3 Features


the avalanche energy rating (Eas) is 245 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 48 ns
based on its rated peak drain current 400A.
a 40V drain to source voltage (Vdss)


SQM100N04-2M7_GE3 Applications


There are a lot of Vishay Siliconix
SQM100N04-2M7_GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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