SQJ942EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Package / Case :

PowerPAK® SO-8

Number of Elements :

2

DS Breakdown Voltage-Min :

40V

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.8A, 10V, 11m Ω @ 10.1A, 10V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Avalanche Energy Rating (Eas) :

18.5 mJ

JESD-30 Code :

R-PSSO-G4

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.022Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Power - Max :

17W 48W

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

FET Type :

2 N-Channel (Dual)

Series :

Automotive, AEC-Q101, TrenchFET®

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Input Capacitance (Ciss) (Max) @ Vds :

809pF @ 20V 1451pF @ 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Tc 45A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

19.7nC @ 10V, 33.8nC @ 10V

Terminal Position :

Single

Number of Terminations :

4