SQJ860EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

48W Tc

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

60A

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.006Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Drain Current-Max (Abs) (ID) :

36A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6m Ω @ 10A, 10V

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Power Dissipation :

48W

Terminal Position :

Single

Number of Terminations :

4

Height :

1.267mm

Max Junction Temperature (Tj) :

175°C

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Number of Channels :

1

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G4

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101, TrenchFET®

Factory Lead Time :

12 Weeks

Surface Mount :

yes