SQJ840EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 15V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rds On Max :

9.3 mΩ

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Rise Time :

11ns

Drain to Source Resistance :

9.3mOhm

Package / Case :

PowerPAK® SO-8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

175°C

Weight :

506.605978mg

Rds On (Max) @ Id, Vgs :

9.3mOhm @ 10.3A, 10V

Fall Time (Typ) :

17 ns

Radiation Hardening :

No

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Threshold Voltage :

1.7V

Nominal Vgs :

1.7 V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Continuous Drain Current (ID) :

30A

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

28 ns

Power Dissipation-Max :

46W Tc

Published :

2016

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

11 ns

Number of Channels :

1

Input Capacitance :

1.9nF

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

PowerPAK® SO-8

REACH SVHC :

Unknown