SQD45P03-12_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-30V

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

11 ns

Drain to Source Resistance :

12mOhm

Number of Channels :

1

Radiation Hardening :

No

Threshold Voltage :

-1.5V

Turn-Off Delay Time :

29 ns

Supplier Device Package :

TO-252, (D-Pak)

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Power Dissipation :

71W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Fall Time (Typ) :

19 ns

Continuous Drain Current (ID) :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3495pF @ 15V

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

FET Type :

P-Channel

Rise Time :

11ns

Series :

Automotive, AEC-Q101, TrenchFET®

Number of Pins :

3

Rds On Max :

10 MΩ

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

10mOhm @ 15A, 10V

Power Dissipation-Max :

71W Tc

Factory Lead Time :

12 Weeks

Max Operating Temperature :

175°C

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Element Configuration :

Single

Input Capacitance :

3.495nF

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63