SQD40N06-25L-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Number of Terminations :

2

Rise Time :

9ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Max Power Dissipation :

1.4W

Resistance :

22mOhm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

100A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

28 ns

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

9 ns

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

1.4W

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

22m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Factory Lead Time :

21 Weeks

Continuous Drain Current (ID) :

30A

Number of Elements :

1

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Series :

TrenchFET®