SQD45N05-20L-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

50V

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Pbfree Code :

yes

Turn-Off Delay Time :

32 ns

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Power Dissipation :

2.5W

Factory Lead Time :

49 Weeks

Rise Time :

10ns

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

2.5W Ta 75W Tc

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

50A

Pin Count :

4

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.02Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Fall Time (Typ) :

7 ns

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Published :

2008

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V