SQ3585EV-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Series :

Automotive, AEC-Q101, TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3.57A Tc 2.5A Tc

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V, 3.5nC @ 4.5V

Number of Terminations :

6

FET Type :

N and P-Channel

DS Breakdown Voltage-Min :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Power - Max :

1.67W

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Configuration :

SEPARATE, 2 ELEMENTS

Surface Mount :

yes

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

77m Ω @ 1A, 4.5V, 166m Ω @ 1A, 4.5V

JESD-30 Code :

R-PDSO-G6

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

3.57A

Drain-source On Resistance-Max :

0.12Ohm

Factory Lead Time :

12 Weeks