SQ2361AEES-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

170m Ω @ 2.4A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

P-Channel

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

2

Operating Temperature :

-55°C~175°C TA

Continuous Drain Current (ID) :

-2.8A

Number of Channels :

1

Vgs (Max) :

±20V

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Number of Terminations :

3

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 30V

Drain to Source Voltage (Vdss) :

60V

Max Junction Temperature (Tj) :

175°C

Drain to Source Breakdown Voltage :

-60V

Series :

Automotive, AEC-Q101, TrenchFET®

Fall Time (Typ) :

4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rise Time :

9ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

1.12mm

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

45 pF

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PDSO-G3

Turn-Off Delay Time :

24 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation :

2W

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Power Dissipation-Max :

2W Tc

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V