SQ2309ES-T1_GE3

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Mfr.Part #
SQ2309ES-T1_GE3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 60V 1.7A TO236
Stock
543,574
In Stock :
543,574

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
2W Tc
FET Type :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
265pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Published :
2016
Series :
Automotive, AEC-Q101, TrenchFET®
Drain to Source Resistance :
125mOhm
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
336mOhm @ 3.8A, 10V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
1.7A Tc
Supplier Device Package :
TO-236 (SOT-23)
Factory Lead Time :
12 Weeks
Packaging :
Tape and Reel (TR)
Drain to Source Voltage (Vdss) :
60V
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Datasheets
SQ2309ES-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQ2309ES-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, SQ2309ES-T1_GE3 pinout, SQ2309ES-T1_GE3 datasheet PDF, SQ2309ES-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQ2309ES-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQ2309ES-T1_GE3


P-Channel Tape & Reel (TR) 336mOhm @ 3.8A, 10V ±20V 265pF @ 25V 8.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3

SQ2309ES-T1_GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 265pF @ 25V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 125mOhm.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SQ2309ES-T1_GE3 Features


single MOSFETs transistor is 125mOhm
a 60V drain to source voltage (Vdss)


SQ2309ES-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQ2309ES-T1_GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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