SQ2310ES-T1_GE3

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Mfr.Part #
SQ2310ES-T1_GE3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 20V 6A TO236
Stock
149,160
In Stock :
149,160

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Input Capacitance (Ciss) (Max) @ Vds :
485pF @ 10V
Series :
TrenchFET®
Package / Case :
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id :
1V @ 250μA
Published :
2016
Vgs (Max) :
±8V
Rds On (Max) @ Id, Vgs :
30mOhm @ 5A, 4.5V
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
20V
Factory Lead Time :
12 Weeks
Operating Temperature :
-55°C~175°C TJ
Supplier Device Package :
TO-236
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 4.5V
Power Dissipation-Max :
2W Tc
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Drain to Source Resistance :
24mOhm
Datasheets
SQ2310ES-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQ2310ES-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, SQ2310ES-T1_GE3 pinout, SQ2310ES-T1_GE3 datasheet PDF, SQ2310ES-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQ2310ES-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQ2310ES-T1_GE3


N-Channel Tape & Reel (TR) 30mOhm @ 5A, 4.5V ±8V 485pF @ 10V 8.5nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

SQ2310ES-T1_GE3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 485pF @ 10V is its maximum input capacitance.This device has a drain-to-source resistance of 24mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.

SQ2310ES-T1_GE3 Features


single MOSFETs transistor is 24mOhm
a 20V drain to source voltage (Vdss)


SQ2310ES-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQ2310ES-T1_GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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