SQ2360EES-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

Unknown

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Avalanche Energy Rating (Eas) :

1.8 mJ

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Power Dissipation :

3W

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Dual

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Packaging :

Digi-Reel®

Published :

2008

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

Element Configuration :

Single

Max Power Dissipation :

3W

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Pin Count :

3

Terminal Form :

Gull wing

Number of Pins :

3

Drain-source On Resistance-Max :

0.066Ohm

Rds On (Max) @ Id, Vgs :

85m Ω @ 6A, 10V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

4.4A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rise Time :

11ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Elements :

1

ECCN Code :

EAR99

Threshold Voltage :

1.5V

Turn On Delay Time :

5 ns

Lead Free :

Lead Free

Turn-Off Delay Time :

10 ns