SQ2351ES-T1_GE3
- Mfr.Part #
- SQ2351ES-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.2A SOT23-3
- Stock
- 17,438
- In Stock :
- 17,438
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- FET Type :
- P-Channel
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 5.5nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation-Max :
- 2W Tc
- Vgs (Max) :
- ±12V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Tc
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Rise Time :
- 18ns
- Max Operating Temperature :
- 175°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 12V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 115mOhm @ 2.4A, 4.5V
- Published :
- 2017
- Turn On Delay Time :
- 20 ns
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Drain to Source Resistance :
- 115mOhm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 8 ns
- Resistance :
- 115mOhm
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 3.2A
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 10V
- Datasheets
- SQ2351ES-T1_GE3

P-Channel Tape & Reel (TR) 115mOhm @ 2.4A, 4.5V ±12V 330pF @ 10V 5.5nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
SQ2351ES-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 330pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.2A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 115mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
SQ2351ES-T1_GE3 Features
a continuous drain current (ID) of 3.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 115mOhm
a 20V drain to source voltage (Vdss)
SQ2351ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2351ES-T1_GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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