SQ2348ES-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.024Ohm

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 15V

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchFET®

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

24m Ω @ 12A, 10V

Number of Terminations :

3

Feedback Cap-Max (Crss) :

50 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

JESD-30 Code :

R-PDSO-G3

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Power Dissipation-Max :

3W Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

TO-236AB

Number of Elements :

1