SQ2325ES-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3W

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

840mA Tc

Continuous Drain Current (ID) :

1A

Power Dissipation-Max :

3W Tc

Factory Lead Time :

12 Weeks

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Series :

Automotive, AEC-Q101, TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 50V

Drain to Source Voltage (Vdss) :

150V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Operating Temperature :

-55°C~175°C TA

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

1.77Ohm @ 500mA, 10V

Supplier Device Package :

TO-236 (SOT-23)

Min Operating Temperature :

-55°C

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3