SPW35N60CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Vgs (Max) :

±20V

Published :

2005

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1.9mA

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

313W Tc

JEDEC-95 Code :

TO-247AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

212nC @ 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

CoolMOS™

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.118Ohm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

85A

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

1300 mJ

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

5060pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

34.1A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

118m Ω @ 21.6A, 10V

Drain Current-Max (Abs) (ID) :

34.1A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED