SPW35N60C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Drain-source On Resistance-Max :

0.1Ohm

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AA

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

103.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation-Max :

313W Tc

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Package / Case :

TO-247-3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

100m Ω @ 21.9A, 10V

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

34.6A Tc

Drain Current-Max (Abs) (ID) :

34.6A

Avalanche Energy Rating (Eas) :

1500 mJ

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.9V @ 1.9mA

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Series :

CoolMOS™

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Surface Mount :

No

Published :

2005

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE