SPW07N60CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

230 mJ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Mounting Type :

Through Hole

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

17A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

RoHS Status :

RoHS Compliant

Terminal Position :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Number of Elements :

1

Drain-source On Resistance-Max :

0.7Ohm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

700m Ω @ 4.6A, 10V

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Pin Count :

3

Transistor Element Material :

SILICON

Pbfree Code :

yes

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247AD

Package / Case :

TO-247-3

Drain to Source Voltage (Vdss) :

650V

Power Dissipation-Max :

83W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 300μA

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

6.6A