SPW07N60CFD

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Mfr.Part #
SPW07N60CFD
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
181,076
In Stock :
181,076

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Termination :
Through Hole
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20 V
Drain to Source Breakdown Voltage :
600 V
Continuous Drain Current (ID) :
6.6 A
RoHS :
Compliant
Package :
Bulk
Nominal Vgs :
4 V
Rise Time :
25 ns
Max Operating Temperature :
150 °C
Series :
*
Rds On Max :
700 mΩ
Power Dissipation :
83
Max Power Dissipation :
83 W
Turn-Off Delay Time :
36 ns
REACH SVHC :
Unknown
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
650 V
Number of Pins :
3
Dual Supply Voltage :
650 V
Continuous Drain Current Id :
6.6
Input Capacitance :
790 pF
Element Configuration :
Single
Channel Type :
N Channel
Drain to Source Resistance :
700 mΩ
Turn-On Delay Time :
12 ns
Datasheets
SPW07N60CFD
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPW07N60CFD from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, SPW07N60CFD pinout, SPW07N60CFD datasheet PDF, SPW07N60CFD amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPW07N60CFD ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPW07N60CFD


650 V

SPW07N60CFD Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.6 A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600 V. And this device has 600 V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 700 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Operating this transistor requires a 650 V drain to source voltage (Vdss).

SPW07N60CFD Features


a continuous drain current (ID) of 6.6 A
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 700 mΩ
a 650 V drain to source voltage (Vdss)


SPW07N60CFD Applications


There are a lot of Infineon
SPW07N60CFD applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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