SPW07N60CFD
- Mfr.Part #
- SPW07N60CFD
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 181,076
- In Stock :
- 181,076
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Termination :
- Through Hole
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20 V
- Drain to Source Breakdown Voltage :
- 600 V
- Continuous Drain Current (ID) :
- 6.6 A
- RoHS :
- Compliant
- Package :
- Bulk
- Nominal Vgs :
- 4 V
- Rise Time :
- 25 ns
- Max Operating Temperature :
- 150 °C
- Series :
- *
- Rds On Max :
- 700 mΩ
- Power Dissipation :
- 83
- Max Power Dissipation :
- 83 W
- Turn-Off Delay Time :
- 36 ns
- REACH SVHC :
- Unknown
- Min Operating Temperature :
- -55 °C
- Drain to Source Voltage (Vdss) :
- 650 V
- Number of Pins :
- 3
- Dual Supply Voltage :
- 650 V
- Continuous Drain Current Id :
- 6.6
- Input Capacitance :
- 790 pF
- Element Configuration :
- Single
- Channel Type :
- N Channel
- Drain to Source Resistance :
- 700 mΩ
- Turn-On Delay Time :
- 12 ns
- Datasheets
- SPW07N60CFD

650 V
SPW07N60CFD Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.6 A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600 V. And this device has 600 V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 700 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Operating this transistor requires a 650 V drain to source voltage (Vdss).
SPW07N60CFD Features
a continuous drain current (ID) of 6.6 A
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 700 mΩ
a 650 V drain to source voltage (Vdss)
SPW07N60CFD Applications
There are a lot of Infineon
SPW07N60CFD applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SPW07N60CFDFKSA1 | Infineon Technologies | 15,595 | MOSFET N-CH 650V 6.6A TO247-3 |
















