SPU09P06PL
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- Mfr.Part #
- SPU09P06PL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 9.7A TO251-3
- Stock
- 25,849
- In Stock ：
- 25,849
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 42W Tc
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 9.7A
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 6.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ) :
- 89 ns
- Pulsed Drain Current-Max (IDM) :
- 38.8A
- Transistor Application :
- SWITCHING
- Published :
- 2001
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Rise Time :
- 168ns
- Terminal Finish :
- MATTE TIN
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Drain-source On Resistance-Max :
- 0.25Ohm
- Current Rating :
- -9.7A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Voltage - Rated DC :
- -60V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- SIPMOS®
- Drain to Source Breakdown Voltage :
- -60V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 60V
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 70 mJ
- JESD-30 Code :
- R-PSIP-T3
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 49 ns
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 42W
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Datasheets
- SPU09P06PL
P-Channel Tube 250m Ω @ 6.8A, 10V ±20V 450pF @ 25V 21nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
SPU09P06PL Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 70 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9.7A amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [49 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 38.8A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SPU09P06PL Features
the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 9.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 38.8A.
a 60V drain to source voltage (Vdss)
SPU09P06PL Applications
There are a lot of Infineon Technologies
SPU09P06PL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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