SPU02N60C3BKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

3Ohm

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

25W Tc

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Packaging :

Tube

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Pin Count :

3

Series :

CoolMOS™

Pulsed Drain Current-Max (IDM) :

5.4A

Avalanche Energy Rating (Eas) :

50 mJ

Vgs(th) (Max) @ Id :

3.9V @ 80µA

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Surface Mount :

No

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

650V

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

1.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)