SPU08P06P
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- Mfr.Part #
- SPU08P06P
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 8.83A TO251-3
- Stock
- 29,357
- In Stock ：
- 29,357
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 42W Tc
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 70 mJ
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Terminations :
- 3
- HTS Code :
- 8541.29.00.95
- Pulsed Drain Current-Max (IDM) :
- 35.32A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Terminal Finish :
- MATTE TIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Packaging :
- Tube
- Lead Free :
- Contains Lead
- Current Rating :
- -8.8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 25V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- SIPMOS®
- Qualification Status :
- Not Qualified
- Operating Temperature (Max) :
- 175°C
- Voltage - Rated DC :
- -60V
- Published :
- 1999
- Drain-source On Resistance-Max :
- 0.3Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 8.83A Ta
- Continuous Drain Current (ID) :
- 8.83A
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 6.2A, 10V
- Rise Time :
- 46ns
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Datasheets
- SPU08P06P
P-Channel Tube 300m Ω @ 6.2A, 10V 420pF @ 25V 13nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
SPU08P06P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 70 mJ.A device's maximal input capacitance is 420pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.83A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 35.32A, which is its maximum rated peak drain current.This transistor requires a 60V drain to source voltage (Vdss).
SPU08P06P Features
the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 8.83A
based on its rated peak drain current 35.32A.
a 60V drain to source voltage (Vdss)
SPU08P06P Applications
There are a lot of Infineon Technologies
SPU08P06P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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