SPU07N60S5
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- Mfr.Part #
- SPU07N60S5
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7.3A TO251-3
- Stock
- 17,050
- In Stock ：
- 17,050
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 4.6A, 10V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2005
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Tc
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 83W Tc
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 14.6A
- Factory Lead Time :
- 10 Weeks
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Turn-Off Delay Time :
- 170 ns
- Power Dissipation :
- 83W
- Turn On Delay Time :
- 120 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 350µA
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.6Ohm
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 7.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 970pF @ 25V
- Rise Time :
- 40ns
- Fall Time (Typ) :
- 20 ns
- Current Rating :
- 7.3A
- Datasheets
- SPU07N60S5
N-Channel Tube 600m Ω @ 4.6A, 10V ±20V 970pF @ 25V 35nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
SPU07N60S5 Overview
A device's maximal input capacitance is 970pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 170 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 14.6A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 120 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
SPU07N60S5 Features
a continuous drain current (ID) of 7.3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 170 ns
based on its rated peak drain current 14.6A.
SPU07N60S5 Applications
There are a lot of Infineon Technologies
SPU07N60S5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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