SPU03N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 10V

Mounting Type :

Through Hole

Input Capacitance :

400 pF

Gate to Source Voltage (Vgs) :

20 V

Drain to Source Breakdown Voltage :

600 V

Lifecycle Status :

NRND (Last Updated: 2 years ago)

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

REACH SVHC :

No SVHC

Max Operating Temperature :

150 °C

Vgs(th) (Max) @ Id :

3.9V @ 135µA

Drain to Source Resistance :

1.4 Ω

Power Dissipation :

38 W

Package Quantity :

1500

Element Configuration :

Single

On-State Resistance :

1.4 Ω

Rise Time :

3 ns

Continuous Drain Current (ID) :

3.2 A

Max Power Dissipation :

38 W

Turn-On Delay Time :

7 ns

Dual Supply Voltage :

650 V

Nominal Vgs :

3 V

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

3.2A (Tc)

Product Status :

Active

Supplier Device Package :

PG-TO251-3

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Min Operating Temperature :

-55 °C

Drain to Source Voltage (Vdss) :

600 V

Rds On Max :

1.4 Ω

FET Feature :

-

Turn-Off Delay Time :

64 ns

Radiation Hardening :

No

FET Type :

N-Channel

Number of Pins :

3

Power Dissipation (Max) :

38W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

400 pF @ 25 V

Package :

Bulk

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS :

Compliant

Termination :

Through Hole