SPI21N10
- Mfr.Part #
- SPI21N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 21A TO262-3
- Stock
- 419
- In Stock :
- 419
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 100V
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 44μA
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 865pF @ 25V
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.08Ohm
- Pulsed Drain Current-Max (IDM) :
- 84A
- Fall Time (Typ) :
- 23 ns
- Continuous Drain Current (ID) :
- 21A
- Turn-Off Delay Time :
- 37 ns
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Series :
- SIPMOS®
- FET Type :
- N-Channel
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 15A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 21A
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 90W Tc
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Rise Time :
- 56ns
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 90W
- Gate Charge (Qg) (Max) @ Vgs :
- 38.4nC @ 10V
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Published :
- 2002
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- SPI21N10

N-Channel Tube 80m Ω @ 15A, 10V ±20V 865pF @ 25V 38.4nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
SPI21N10 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 130 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 865pF @ 25V.This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 37 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 84A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SPI21N10 Features
the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 84A.
SPI21N10 Applications
There are a lot of Infineon Technologies
SPI21N10 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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