SPI20N60CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

208W (Tc)

Drain to Source Resistance :

220 mΩ

Termination :

Through Hole

RoHS :

Compliant

Vgs (Max) :

±20V

Max Operating Temperature :

150 °C

Package :

Bulk

Drain to Source Breakdown Voltage :

600 V

Continuous Drain Current (ID) :

20.7 A

Element Configuration :

Single

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2400 pF @ 25 V

Power Dissipation :

208 W

Turn-Off Delay Time :

59 ns

Product Status :

Active

Technology :

MOSFET (Metal Oxide)

FET Type :

N-Channel

Rds On Max :

220 mΩ

Max Power Dissipation :

208 W

FET Feature :

-

Gate to Source Voltage (Vgs) :

20 V

Rise Time :

15 ns

Drain to Source Voltage (Vdss) :

600 V

Input Capacitance :

2.4 nF

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

220mOhm @ 13.1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

124 nC @ 10 V

Vgs(th) (Max) @ Id :

5V @ 1mA

Nominal Vgs :

4 V

Series :

CoolMOS™

Operating Temperature :

-55°C ~ 150°C (TJ)

Min Operating Temperature :

-55 °C

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package :

PG-TO262-3-1

Current - Continuous Drain (Id) @ 25°C :

20.7A (Tc)

Dual Supply Voltage :

650 V