SPI08N80C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±20V

Number of Terminations :

3

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

800V

Pulsed Drain Current-Max (IDM) :

24A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

340 mJ

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2005

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

104W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

DS Breakdown Voltage-Min :

800V

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Packaging :

Tube

Drain-source On Resistance-Max :

0.65Ohm

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

6 Weeks

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No