SPI07N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

FET Feature :

-

Gate to Source Voltage (Vgs) :

20 V

Mounting Type :

Through Hole

Lifecycle Status :

NRND (Last Updated: 2 years ago)

Number of Pins :

3

Current Rating :

7.3 A

Max Dual Supply Voltage :

600 V

Vgs(th) (Max) @ Id :

3.9V @ 350µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Turn-On Delay Time :

6 ns

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

600mOhm @ 4.6A, 10V

Package :

Bulk

Input Capacitance :

790 pF

Max Power Dissipation :

83 W

Series :

CoolMOS™

Rds On Max :

600 mΩ

Rise Time :

3.5 ns

Current - Continuous Drain (Id) @ 25°C :

7.3A (Tc)

Turn-Off Delay Time :

60 ns

FET Type :

N-Channel

Drain to Source Resistance :

600 mΩ

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Continuous Drain Current (ID) :

7.3 A

Package Quantity :

500

Drain to Source Breakdown Voltage :

600 V

Power Dissipation :

83

Power Dissipation (Max) :

83W (Tc)

Element Configuration :

Single

Min Operating Temperature :

-55 °C

RoHS :

Compliant

Voltage Rating (DC) :

650 V

Continuous Drain Current Id :

7.3

Channel Type :

N

Drain to Source Voltage (Vdss) :

600 V

Input Capacitance (Ciss) (Max) @ Vds :

790 pF @ 25 V

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

On-State Resistance :

600 mΩ

Lead Free :

Lead Free

Operating Temperature :

-55°C ~ 150°C (TJ)

Max Operating Temperature :

150 °C

Mount :

Through Hole

Supplier Device Package :

PG-TO262-3-1

Vgs (Max) :

±20V