SPD50P03LGBTMA1
- Mfr.Part #
- SPD50P03LGBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 50A TO252-5
- Stock
- 9,658
- In Stock :
- 9,658
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G4
- Input Capacitance (Ciss) (Max) @ Vds :
- 6880pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- OptiMOS™
- Package / Case :
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 150W Tc
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 200A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Factory Lead Time :
- 26 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 126nC @ 10V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 50A
- DS Breakdown Voltage-Min :
- 30V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 50A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- No
- Avalanche Energy Rating (Eas) :
- 256 mJ
- Datasheets
- SPD50P03LGBTMA1

P-Channel Tape & Reel (TR) 7m Ω @ 50A, 10V ±20V 6880pF @ 25V 126nC @ 10V 30V TO-252-5, DPak (4 Leads + Tab), TO-252AD
SPD50P03LGBTMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 256 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6880pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 200A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SPD50P03LGBTMA1 Features
the avalanche energy rating (Eas) is 256 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)
SPD50P03LGBTMA1 Applications
There are a lot of Infineon Technologies
SPD50P03LGBTMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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