SPD50P03LGBTMA1

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Mfr.Part #
SPD50P03LGBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Datasheet
Download
Description
MOSFET P-CH 30V 50A TO252-5
Stock
9,658
In Stock :
9,658

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin (Sn)
Published :
2007
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G4
Input Capacitance (Ciss) (Max) @ Vds :
6880pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
OptiMOS™
Package / Case :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
50A Tc
JESD-609 Code :
e3
Pin Count :
4
Vgs (Max) :
±20V
Power Dissipation-Max :
150W Tc
ECCN Code :
EAR99
Terminal Position :
Single
Transistor Element Material :
SILICON
Number of Elements :
1
Drain to Source Voltage (Vdss) :
30V
Drain-source On Resistance-Max :
0.007Ohm
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
200A
Vgs(th) (Max) @ Id :
2V @ 250μA
Factory Lead Time :
26 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
FET Type :
P-Channel
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
126nC @ 10V
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form :
Gull wing
Number of Terminations :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Surface Mount :
yes
Drain Current-Max (Abs) (ID) :
50A
DS Breakdown Voltage-Min :
30V
Rds On (Max) @ Id, Vgs :
7m Ω @ 50A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Pbfree Code :
No
Avalanche Energy Rating (Eas) :
256 mJ
Datasheets
SPD50P03LGBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPD50P03LGBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-5, DPak (4 Leads + Tab), TO-252AD, Number of Terminations:4, Operating Temperature:-55°C~175°C TJ, SPD50P03LGBTMA1 pinout, SPD50P03LGBTMA1 datasheet PDF, SPD50P03LGBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPD50P03LGBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPD50P03LGBTMA1


P-Channel Tape & Reel (TR) 7m Ω @ 50A, 10V ±20V 6880pF @ 25V 126nC @ 10V 30V TO-252-5, DPak (4 Leads + Tab), TO-252AD

SPD50P03LGBTMA1 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 256 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6880pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 200A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SPD50P03LGBTMA1 Features


the avalanche energy rating (Eas) is 256 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)


SPD50P03LGBTMA1 Applications


There are a lot of Infineon Technologies
SPD50P03LGBTMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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