SPD50N03S2-07
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- Mfr.Part #
- SPD50N03S2-07
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A TO252-3
- Stock
- 8,991
- In Stock ：
- 8,991
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 136W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Series :
- OptiMOS™
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 27 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 46.5nC @ 10V
- Fall Time (Typ) :
- 25 ns
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 200A
- Rise Time :
- 36ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Published :
- 2003
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2170pF @ 25V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 136W
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 50A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Continuous Drain Current (ID) :
- 50A
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0073Ohm
- Current Rating :
- 50A
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 85µA
- Datasheets
- SPD50N03S2-07
N-Channel Tape & Reel (TR) 7.3m Ω @ 50A, 10V ±20V 2170pF @ 25V 46.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD50N03S2-07 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2170pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
SPD50N03S2-07 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 200A.
SPD50N03S2-07 Applications
There are a lot of Infineon Technologies
SPD50N03S2-07 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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