SPA15N60CFDXKSA1
- Mfr.Part #
- SPA15N60CFDXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 13.4A TO220-FP
- Stock
- 3,892
- In Stock :
- 3,892
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1820pF @ 25V
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 650V
- Pin Count :
- 3
- Number of Elements :
- 1
- Packaging :
- Tube
- Fall Time (Typ) :
- 5 ns
- Power Dissipation :
- 34W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 34W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 43 ns
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 13.4A Tc
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Rise Time :
- 24ns
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 9.4A, 10V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 13.4A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Max Dual Supply Voltage :
- 600V
- Lead Free :
- Lead Free
- Series :
- CoolMOS™
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 47 ns
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Datasheets
- SPA15N60CFDXKSA1

N-Channel Tube 330m Ω @ 9.4A, 10V ±20V 1820pF @ 25V 84nC @ 10V 650V TO-220-3 Full Pack
SPA15N60CFDXKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 460 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1820pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 13.4A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 47 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 43 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
SPA15N60CFDXKSA1 Features
the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 13.4A
the turn-off delay time is 47 ns
a 650V drain to source voltage (Vdss)
SPA15N60CFDXKSA1 Applications
There are a lot of Infineon Technologies
SPA15N60CFDXKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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