SPA11N60CFDXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Vgs (Max) :

±20V

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 1.9mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Published :

2005

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Mounting Type :

Through Hole

Pin Count :

3

Rds On (Max) @ Id, Vgs :

440m Ω @ 7A, 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

33W Tc

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.44Ohm

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

28A

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

11A

Series :

CoolMOS™

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

340 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

DS Breakdown Voltage-Min :

600V

Surface Mount :

No