SMBTA42E6327HTSA1
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- Mfr.Part #
- SMBTA42E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23
- Stock
- 16,176
- In Stock ：
- 16,176
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 500mA
- Transition Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 360mW
- Width :
- 1.3mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Frequency :
- 70MHz
- Power Dissipation :
- 360mW
- Collector Emitter Voltage (VCEO) :
- 10V
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Halogen Free :
- Not Halogen Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 40
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 300V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 300V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MBTA42
- Published :
- 2011
- Length :
- 2.9mm
- Max Breakdown Voltage :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Height :
- 1mm
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Datasheets
- SMBTA42E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMBTA42E6327HTSA1 Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 300V volts.The maximum collector current is 500mA volts.
SMBTA42E6327HTSA1 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
SMBTA42E6327HTSA1 Applications
There are a lot of Infineon Technologies
SMBTA42E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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