SMBTA06E6433HTMA1
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- Mfr.Part #
- SMBTA06E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23
- Stock
- 30,827
- In Stock ：
- 30,827
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Published :
- 2011
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 330mW
- Power Dissipation :
- 330mW
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transition Frequency :
- 100MHz
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Base Part Number :
- MBTA06
- Max Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 4V
- Max Collector Current :
- 500mA
- Datasheets
- SMBTA06E6433HTMA1
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMBTA06E6433HTMA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
SMBTA06E6433HTMA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
SMBTA06E6433HTMA1 Applications
There are a lot of Infineon Technologies
SMBTA06E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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