SMBT3946DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

200mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

Number of Pins :

6

Frequency - Transition :

300MHz 250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Polarity :

NPN, PNP

Pin Count :

6

Turn On Time-Max (ton) :

70ns

Transition Frequency :

300MHz

JESD-609 Code :

e3

Max Power Dissipation :

150mW

Published :

2009

Reference Standard :

AEC-Q101

Base Part Number :

MBT3946D

Transistor Application :

AMPLIFIER

Transistor Type :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Voltage (VCEO) :

40V

Terminal Form :

Gull wing

Radiation Hardening :

No

Mounting Type :

Surface Mount

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

40V

Power Dissipation :

150mW

Factory Lead Time :

8 Weeks

Collector Base Voltage (VCBO) :

60V

Number of Terminations :

6

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)