SMBT3904E6327HTSA1
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- Mfr.Part #
- SMBT3904E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT23
- Stock
- 158,672
- In Stock ：
- 158,672
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 330mW
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Base Part Number :
- MBT3904
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 330mW
- Turn On Time-Max (ton) :
- 70ns
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- Turn Off Time-Max (toff) :
- 250ns
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 200mA
- Emitter Base Voltage (VEBO) :
- 6V
- Halogen Free :
- Not Halogen Free
- Voltage - Rated DC :
- 40V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 1V
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- Number of Terminations :
- 3
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Datasheets
- SMBT3904E6327HTSA1
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMBT3904E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
SMBT3904E6327HTSA1 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
SMBT3904E6327HTSA1 Applications
There are a lot of Infineon Technologies
SMBT3904E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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