SMBT2907AE6327HTSA1
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- Mfr.Part #
- SMBT2907AE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT23
- Stock
- 36,666
- In Stock ：
- 36,666
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Base Part Number :
- MBT2907A
- Frequency :
- 200MHz
- Published :
- 2006
- Lead Free :
- Lead Free
- Halogen Free :
- Not Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Power Dissipation :
- 330mW
- Collector Emitter Voltage (VCEO) :
- 10V
- Voltage - Rated DC :
- -60V
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 330mW
- Terminal Position :
- Dual
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 200MHz
- Turn On Time-Max (ton) :
- 50ns
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Current Rating :
- -600mA
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Max Collector Current :
- 600mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Datasheets
- SMBT2907AE6327HTSA1
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMBT2907AE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMBT2907AE6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
SMBT2907AE6327HTSA1 Applications
There are a lot of Infineon Technologies
SMBT2907AE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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