SIZ980DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.0067Ohm

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual), Schottky

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN SOURCE

Surface Mount :

yes

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain Current-Max (Abs) (ID) :

20A

Number of Elements :

2

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 15V 4600pF @ 15V

Transistor Element Material :

SILICON

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 15A, 10V, 1.6m Ω @ 19A, 10V

Avalanche Energy Rating (Eas) :

11.2 mJ

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V, 35nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

90A

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-N6

Current - Continuous Drain (Id) @ 25°C :

20A Tc 60A Tc

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

20W 66W

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-PowerWDFN

Number of Terminations :

6

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE