SIZ720DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 10V

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-PowerPair™

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Power Dissipation :

4.6W

Max Power Dissipation :

48W

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

2 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power - Max :

27W 48W

FET Type :

2 N-Channel (Half Bridge)

Height :

750μm

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Element Configuration :

Dual

Mount :

Surface Mount

Radiation Hardening :

No

Continuous Drain Current (ID) :

16A

Number of Pins :

6

FET Feature :

Logic Level Gate

Length :

6mm

Width :

3.73mm

Series :

TrenchFET®

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 16.8A, 10V