SIUD412ED-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

NO LEAD

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

900mV @ 250μA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Terminal Position :

Dual

DS Breakdown Voltage-Min :

12V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

0.71nC @ 4.5V

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

340m Ω @ 500mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

500mA Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±5V

Surface Mount :

yes

Drain-source On Resistance-Max :

0.34Ohm

Package / Case :

PowerPAK® 0806

Power Dissipation-Max :

1.25W Ta

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

21pF @ 6V