SIUD403ED-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 300mA, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

31pF @ 10V

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-N3

Terminal Form :

NO LEAD

Number of Terminations :

3

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Power Dissipation-Max :

1.25W Ta

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Vgs (Max) :

±8V

Series :

TrenchFET® Gen III

ECCN Code :

EAR99

Package / Case :

PowerPAK® 0806

Vgs(th) (Max) @ Id :

900mV @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON