SISH617DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Power Dissipation-Max :

3.7W Ta 52W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

13.9A Ta 35A Tc

Package / Case :

PowerPAK® 1212-8SH

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 15V

Rds On (Max) @ Id, Vgs :

12.3mOhm @ 13.9A, 10V

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

14 Weeks

Supplier Device Package :

PowerPAK® 1212-8SH

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ