SISH110DN-T1-GE3
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- Mfr.Part #
- SISH110DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8SH
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 13.5A PPAK
- Stock
- 29,472
- In Stock ：
- 29,472
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 5.3mOhm @ 21.1A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 4.5V
- Vgs (Max) :
- ±20V
- Series :
- TrenchFET® Gen II
- Power Dissipation-Max :
- 1.5W Ta
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- PowerPAK® 1212-8SH
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- PowerPAK® 1212-8SH
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 14 Weeks
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- SISH110DN-T1-GE3
N-Channel Tape & Reel (TR) 5.3mOhm @ 21.1A, 10V ±20V 21nC @ 4.5V 20V PowerPAK® 1212-8SH
SISH110DN-T1-GE3 Overview
The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SISH110DN-T1-GE3 Features
a 20V drain to source voltage (Vdss)
SISH110DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SISH110DN-T1-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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