SIS902DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

15.4W

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Base Part Number :

SIS902

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

4A

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 38V

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Breakdown Voltage :

75V

Power Dissipation :

3.1W

Turn-Off Delay Time :

12 ns

Pulsed Drain Current-Max (IDM) :

8A

FET Feature :

Standard

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Pbfree Code :

yes

Number of Terminations :

6

Series :

TrenchFET®

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Rise Time :

18ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8 Dual

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Fall Time (Typ) :

9 ns

Turn On Delay Time :

17 ns

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

186m Ω @ 3A, 10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Radiation Hardening :

No

Terminal Form :

C BEND

Continuous Drain Current (ID) :

3A

JESD-30 Code :

S-XDSO-C6

FET Technology :

METAL-OXIDE SEMICONDUCTOR